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Abstract Here, we present results of a computational and experimental study of adsorption of various metals on MoS₂. In particular, we analyzed the binding mechanism of four metallic elements (Ag, Au, Cu, Ni) on MoS₂. Among these elements, Ni exhibits the strongest binding and lowest mobility on the surface of MoS₂. On the other hand, Au and Ag bond very weakly to the surface and have very high mobilities. Our calculations for Cu show that its bonding and surface mobility are between these two groups. Experimentally, Ni films exhibit a composition characterized by randomly oriented nanoscale clusters. This is consistent with the larger cohesive energy of Ni atoms as compared with their binding energy with MoS₂, which is expected to result in 3D clusters. In contrast, Au and Ag tend to form atomically flat plateaued structures on MoS₂, which is contrary to their larger cohesive energy as compared to their weak binding with MoS₂. Cu displays a surface morphology somewhat similar to Ni, featuring larger nanoscale clusters. However, unlike Ni, in many cases Cu exhibits small plateaued surfaces on these clusters. This suggests that Cu likely has two competing mechanisms that cause it to span the behaviors seen in the Ni and Au/Ag film morphologies. These results indicate that calculations of the initial binding conditions could be useful for predicting film morphologies. In addition, out calculations show that the adsorption of adatoms with odd electron number like Ag, Au, and Cu results in 100% spin-polarization and integer magnetic moment of the system. Adsorption of Ni adatoms, with even electron number, does not induce a magnetic transition. 

In this study, we present results of a comprehensive computational and experimental study of CoFeVAl and CoFeV0.5Mn0.5Al Heusler alloys. It is shown that while CoFeVAl exhibits a fairly large degree of spin polarization, this material is not half-metallic due to the presence of the vanadium spin-down states at the Fermi level. However, replacing 50% of vanadium with manganese results in a nearly half-metallic transition, largely due to the shift of the Fermi level towards occupied states. Moreover, the half-metallicity of CoFeV0.5Mn0.5Al is rather robust in a wide range of considered mechanical strain and under experimentally observed B2-type atomic disorder, thus making this alloy potentially suitable for practical spintronic applications. Both considered alloys exhibit ferromagnetic alignment at larger lattice constants, aside from a relatively small magnetic moment of vanadium which is anti-aligned with the magnetic moments of Co, Fe and Mn. We have synthesized both CoFeVAl and CoFeV0.5Mn0.5Al alloys in cubic structure with some structural disorder using arc melting and annealing. The structural and magnetic properties of the synthesized CoFeV0.5Mn0.5Al alloy are in good agreement with the theoretical calculations but vary slightly from the parent compound. 

Near surface defects can significantly impact the quality of metallic interconnects and other interfaces necessary to create device structures incorporating two-dimensional materials. Furthermore, the impact of such defects can strongly depend on their organization. In this study, we present scanning tunneling microscopy images and tunneling spectroscopy of point and linear defects near the surface of natural MoS2. The point defects share similar structural and electronic characteristics and occur with comparable frequency as subsurface sulfur vacancies observed previously on natural MoS2. The linear defects observed here occur less frequently than the point defects but share the same depth profile and electronic structure. These data indicate that the linear defects are actually a one-dimensional organization of subsurface sulfur vacancies. Our density functional calculations agree with this assessment in that, for sufficient local defect concentrations, it is energetically more favorable for the defects to be organized in a linear fashion rather than as clusters or even isolated single point defects. Given these measurements were taken from naturally formed MoS2, this organization likely occurs during crystal formation. Considering the impact of one-dimensional organization on the local properties of layered materials, and the potential for them to be introduced purposefully during crystal formation, research into the formation mechanism and properties of these defects could enable new paths for defect engineering in MoS2-based systems. 

Spin-gapless semiconductors (SGS) represent a new type of compounds with potential applications in novel spintronic devices. Here, we performed a comprehensive computational and theoretical study of FeCrTiAl, a quaternary Heusler compound that was recently predicted to exhibit nearly SGS properties. Our calculations indicate that this material undergoes several band structure transitions from essentially semimetallic phase at smaller lattice constants to nearly type-II SGS at the ground state, then to nearly type-III SGS and further to nearly type-I SGS, as the lattice parameter is increased. Another interesting feature of FeCrTiAl is that its spin polarization changes sign from negative to positive as the volume of the cell increases. At the largest considered lattice parameters, this compound exhibits nearly 100% spin polarization. The mechanical expansion discussed in this text may be achieved, in principle, either by applying an epitaxial strain in thin-film geometry, or by chemical substitution, for example with non-magnetic element of larger atomic radius. We hope that the presented results may provide guidance for further research on mechanical strain induced manipulation of electronic and magnetic properties of spin-gapless semiconductors. 

Half-metallic Heusler compounds have been extensively studied in the recent years, both experimentally and theoretically, for potential applications in spin-based electronics. Here, we present the results of a combined theoretical and experimental study of the quaternary Heusler compound NiFeMnAl. Our calculations indicate that this material is half-metallic in the ground state and maintains its half-metallic electronic structure under a considerable range of external hydrostatic pressure and biaxial strain. NiFeMnAl crystallizes in the regular cubic Heusler structure, and exhibits ferromagnetic alignment. The practical feasibility of the proposed system is confirmed in the experimental section of this work. More specifically, a bulk ingot of NiFeMnAl was synthesized in A2 type disordered cubic structure using arc melting. It shows a high Curie temperature of about 468 K and a saturation magnetization of 2.3 μ_B⁄(f.u). The measured magnetization value is smaller than the one calculated for the ordered structure. This discrepancy is likely due to the A2 type atomic disorder, as demonstrated by our calculations. We hope that the presented results may be useful for researchers working on practical applications of spin-based electronics. 

We present computational results on electronic, magnetic, and structural properties of CoVMnSb, a quaternary Heusler alloy. Our calculations indicate that this material may crystallize in two energetically close structural phases: inverted and regular cubic. The inverted cubic phase is the ground state, with ferrimagnetic alignment, and around 80% spin polarization. Despite having a relatively large bandgap in the minority-spin channel close to the Fermi level, this phase does not undergo a half-metallic transition under pressure. This is explained by the “pinning” of the Fermi level at the minority-spin states at the Γ point. At the same time, the regular cubic phase is half-metallic and retains its perfect spin polarization under a wide range of mechanical strain. Transition to a regular cubic phase may be attained by applying uniform pressure (but not biaxial strain). In practice, this pressure may be realized by an atomic substitution of non-magnetic atoms (Sb) with another non-magnetic atom (Si) of a smaller radius. Our calculations indicate that 25% substitution of Sb with Si results in a half-metallic regular cubic phase being the ground state. In addition, CoVMnSb0.5Si0.5 retains its half-metallic properties under a considerable range of mechanical pressure, as well as exhibits thermodynamic stability, thus making this alloy attractive for potential spintronic applications. We hope that the presented results will stimulate experimental efforts to synthesize this compound. 

Abstract We have carried out a combined theoretical and experimental investigation of FeCrVAl, and the effect of Mn and Co doping on its structural, magnetic, and electronic band properties. Our first principles calculations indicate that FeCrVAl, FeCr 0.5 Mn 0.5 VAl, and FeCr 0.5 Co 0.5 VAl exhibit nearly perfect spin polarization, which may be further enhanced by mechanical strain. At the same time, FeCrV 0.5 Mn 0.5 Al and FeCrV 0.5 Co 0.5 Al exhibit a relatively small value of spin polarization, making them less attractive for practical applications. Using arc melting and high vacuum annealing, we synthesized three compounds FeCrVAl, FeCr 0.5 Mn 0.5 VAl, and FeCr 0.5 Co 0.5 VAl, which are predicted to exhibit high spin polarization. The room temperature x-ray diffraction patterns of all samples are fitted with full B2 type disorder with a small amount of FeO 2 secondary phase. All samples show very small saturation magnetizations at room temperature. The thermomagnetic curves M(T) of FeCrVAl and FeCr 0.5 Co 0.5 VAl are similar to that of a paramagnetic material, whereas that of FeCr 0.5 Mn 0.5 VAl indicates ferrimagnetic behavior with the Curie temperature of 135 K. Our findings may be of interest for researchers working on Heusler compounds for spin-based electronic applications.